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HGT Hydraulic Gyratory Crusher

HGT Hydraulic Gyratory Crusher

HGT Gyratory Crusher is a new-type intelligent coarse crusher with big capacity and high efficiency. It integrates mechanical, hydraulic, electric, automated, and intelligent controlling technologies which grant it with advantages traditional crushing

European Type Jaw Crusher PEW

European Type Jaw Crusher PEW

Jaw crushers has stationary jaw crusher, portable jaw crusher and mobile jaw crusher (crawler jaw crusher). Jaw crusher (PEW Series) is not only able to be used together with mine-selecting and gravel processing equipments but also be used independen

Jaw Crusher PE

Jaw Crusher PE

Jaw crusher is driven by a motor, and the moving jaw moves up and down via eccentric shaft. The angle between fixed jaw and moving jaw becomes smaller when the moving jaw runs down, then the materials are crushed into pieces. It will become bigger whe

HPT Hydraulic Cone Crusher

HPT Hydraulic Cone Crusher

Base on the latest technology and decades of years’ producing experience, Our Company designed the HPT series cone crusher. It has excellent crushing efficiency and good hydraulic control system. Now the HPC series cone crusher has wide application

HST Hydraulic Cone Crusher

HST Hydraulic Cone Crusher

HST Single Cylinder Hydraulic Cone Crusher is a new high-efficiency cone crusher independently researched, developed and designed by SBM through summarizing over twenty years of experience and widely absorbing advanced American and German technologies

CI5X Series Impact Crusher

CI5X Series Impact Crusher

CI5X Impact Crusher breaks materials with impact force. When materials enter the working area of hammer, they may be crushed under the high-speed shock and then thrown onto the impact device above the rotor for another crushing. Next, materials bounce

VSI6X Series Vertical Crusher

VSI6X Series Vertical Crusher

Due to the increasing market demand for the scale, intensification, energy conservation, environment protection and high-quality machine-made sand, SBM, a Chinese professional sand maker manufacturer, further optimizes the structure and function of tr

VSI5X Vertical Shaft Impact Crusher

VSI5X Vertical Shaft Impact Crusher

VSI Crushers Working Principle Raw material falls down into feed hopper, and then enters rotor through central entrance hole. It is accelerated in high-speed rotor, and then is thrown out at speed of 60-75m/s. When hitting anvil, it is crushed. Final

VSI Vertical Shaft Impact Crusher

VSI Vertical Shaft Impact Crusher

VSI Series vertical shaft impact crusher is designed by reputed German expert of SBM and every index is in worlds leading standard. It incorporates three crushing types and it can be operated 720 hours continuously. Nowadays, VSI crusher has replaced

VUS aggregate optimization system

VUS aggregate optimization system

The VU system is a global most-advanced dry-process sand-making system. The system is constructed like a tower. Its fully-enclosed layout features high integration. It integrates the functions of high-efficiency sand making, particle shape optimizatio

MTW-Z European Trapezium Mill

MTW-Z European Trapezium Mill

MTW European Grinding Mill is innovatively designed through deep research on grinding mills and development experience. It absorbs the latest European powder grinding technology and concept, and combines the suggestions of 9158 customers on grinding m

5X Series Roller Grinding Mill

5X Series Roller Grinding Mill

Grinding roller of MB5X Pendulum Roller Grinding Mill l adopts diluted oil lubrication. It is a technology initiated domestically which is maintenance-free and easy to operate. Diluted oil lubrication is oil bath lubrication, more convenient than grea

MTW Trapezium Mill

MTW Trapezium Mill

MTW European Grinding Mill is innovatively designed through deep research on grinding mills and development experience. It absorbs the latest European powder grinding technology and concept, and combines the suggestions of 9158 customers on grinding m

LM Vertical Mill

LM Vertical Mill

LM Vertical Grinding Mill integrates crushing, drying, grinding, separating and transport. The structure is simple while the layout is compact. Its occupational area is about 50% of that of the ball-milling system. The LM grinding mill can also be arr

TGM Trapezium Mill

TGM Trapezium Mill

TGM Super Pressure Trapezium Mill The operation principle of main unit of Trapezium mill is that main unit runs with the central shaft that is driven by a gear box. The top of the shaft is connected with a quincunx stand on which a grinding roller is

silicon germanium forming

US10685834B2 Methods for forming a silicon

A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl4), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH4), and tin

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SILICON/GERMANIUM OXIDE PARTICLE INKS AND

What is claimed is: 1. A method for forming solar cell components, the method comprising: applying heat to drive a dopent element from doped silica/germania nanoparticles on a surface of a silicon/germanium substrate into the substrate along a pattern corresponding to a pattern of doped silica/germania nanoparticles along the surface of the substrate to form a dopant profile extending onto the

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CA1075831A Forming silicon integrated circuit region

FORMING SILICON INTEGRATED CIRCUIT REGION BY THE IMPLANTATION OF ARSENIC AND GERMANIUM Abstract A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 x 10 As atoms/total atoms in substrate, and ion implanting germanium into said sub

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Enhanced Photoluminescence Intensity of

Silicon–germanium nanoparticles are prepared by ion implantation and annealing method. Further annealing treatment is carried out in forming gas to passivate nonradiative defects around nanoparticles. Time-resolved photoluminescence measurements were examined to reveal the local environment surrounding the nanoparticles.

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US20100032812A1 Method for forming silicon

A method is provided for controlling the average stress and the strain gradient in structural silicon germanium layers as used in micromachined devices. The method comprises depositing a single silicon germanium layer on a substrate and annealing a predetermined part of the deposited silicon germanium layer. The process parameters of the depositing and/or annealing steps are selected

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Semiconductor Wikipedia

Germanium and silicon semiconductors. Mohamed Atalla developed the surface passivation process in 1957 and the MOS transistor in 1959. The first silicon semiconductor device was a silicon radio crystal detector, developed by American engineer Greenleaf Whittier Pickard in 1906. In 1940, Russell Ohl

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US20140065842A1 Methods And Apparatus For

Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.

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Silicon Germanium Forming stichtingkleinevrienden

Silicon-germanium Wikipedia, the free encyclopedia . SiGe, or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1− x Ge x. It is commonly used

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KR100296211B1 Carbon-doped Silicon Semiconductor

Provided are IV-IV semiconductor devices 21 and 41 having narrower bandgap characteristics than silicon, and methods for forming the same. By incorporating carbon into silicon at substitution concentrations between 0.5% and 1.1%, semiconductor devices 21 and 41 having narrow bandgaps and good crystalline compared to silicon are achieved.

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US20140065842A1 Methods And Apparatus For Forming

Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.

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Enhanced Photoluminescence Intensity of

Silicon–germanium nanoparticles are prepared by ion implantation and annealing method. Further annealing treatment is carried out in forming gas to passivate nonradiative defects around nanoparticles. Time-resolved photoluminescence measurements were examined to reveal the local environment surrounding the nanoparticles.

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Silicon & Germanium Crystal Structure PhysicsOpenLab

28-01-2018· Silicon Laue image, orientation (100) the silicon mono-crystalline plate is sufficiently thin to allow the transmission of the X beam, this has allowed us to obtain the Laue image shown below, in which the symmetry of the crystalline structure is quite evident. Germanium. A sample of germanium was also subjected to XRD analysis.

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semiconductors What is silicon germanium (SiGe

SiGe is a semiconductor alloy, meaning a mixture of two elements, silicon and germanium. Since 2000 or so, SiGe has become widely used to enhance the performance of ICs of various types. SiGe can be processed on equipment nearly the same as used for ordinary silicon.

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Silicon Wikipedia

Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid and semiconductor.It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, and lead are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not

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Silicene and germanene: Silicon and germanium in the

05-01-2015· 1. Introduction 1.1. Fundamentals. Silicene and germanene, graphene’s “cousins” are considered to be single layers of sp 2-hybridized silicon and germanium forming a 2D honeycomb lattice.Silicene and germanene do not exist in Nature in free standing form and, unlike graphene or other 2D materials they cannot be exfoliated from the bulk.

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Doping (semiconductor) Wikipedia

Silicon, germanium and xenon can be used as ion beams for pre-amorphization of silicon wafer surfaces. Formation of an amorphous layer beneath the surface allows forming ultrashallow junctions for p-MOSFETs. Nitrogen is important for growing defect-free silicon crystal.

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Hypothetical types of biochemistry Wikipedia

Hypothetical types of biochemistry are forms of biochemistry speculated to be scientifically viable but not proven to exist at this time. The kinds of living organisms currently known on Earth all use carbon compounds for basic structural and metabolic functions, water as a solvent, and DNA or RNA to define and control their form. If life exists on other planets or moons it may be chemically

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